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PDF AD51652 Data sheet ( Hoja de datos )
| Número de pieza | AD51652 | |
| Descripción | 3W Mono Filter-less Class-D Audio Amplifier | |
| Fabricantes | Elite Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AD51652 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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ESMT
Preliminary
AD51652
3W Mono Filter-less Class-D Audio Amplifier
Features
Supply voltage range: 2.5 V to 5.5 V
Support single-ended or differential analog
input
Low Quiescent Current
Low Output Noise
Low shut-down current
Short power-on transient time
Internal pull-low resistor on shut-down pins
Short-circuit protection
Over-temperature protection
Loudspeaker power within 10% THD+N
1.78W/ch into 8Ω loudspeaker
>3W/ch into 4Ω loudspeaker
Loudspeaker efficiency
93% @ 8Ω, THD+N=10%
85% @ 4Ω, THD+N=10%
MSOP-8L, TDFN-8L and 0.4mm ball pitch
WLCSP-9L packages
Integrated Feedback Resistor of 300kΩ
Applications
Monitor audio
PDA
Portable multimedia devices
Notebook computer
Mobile phone
Description
The AD51652 is a 3.0W mono, filter-less
class-D audio amplifier. Operating with 5.0V
loudspeaker driver supply, it can deliver 3.0W
output power into 4 Ω loudspeaker within 10%
THD+N or 2.6W at 1% THD+N.
The AD51652 is a mono audio amplifier with
high efficiency and suitable for the notebook
computer, and portable multimedia device.
Functional Block Diagram
Gain=300k /Rin
+ Cin
Differential
input
- Cin
Rin INP
Rin
INN
SD
~150k
+-
-+
PWM
Generator
~150k
-wave
Generator
~300k
Loudspeaker
Driver
Overload, Voltage
& Thermal
Protection
VDD
VOP
VON
GND
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014
Revision: 0.03
1/18
1 page  
ESMT
Preliminary
General Electrical Characteristics (TA=25℃)
SYMBOL
PARAMETER
Iq Operating current
Supply current during
IPD power-down mode
Voffset Output offset voltage
Tsd
Thys
fsw
Junction temperature for
driver shutdown
Temperature hysteresis for
recovery from shutdown
Switching rate of
loudspeakers driver
CONDITION
VDD=SD=5V,
Output switching
VDD=5.5V;
SD#=0
Input ac grounded,
VDD=2.5V ~ 5.5V
AV Gain
Ton Turn-on time
VDD = 3.6 V
Loudspeaker short-circuit
RSC detect resistance
VDD = 5.0 V
AD51652
MIN TYP MAX UNIT
3 mA
<1 µΑ
< 1 5 mV
165 oC
20 oC
250
270kΩ
R
in
300
300kΩ
R
in
1.7
2.8
350 kHz
330kΩ
R
in
4
V/V
msec
3.2 ohm
Electrical Characteristics and Specifications for Loudspeaker
Gain= 2 V/V, Load=8Ω, fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted)
SYMBOL
PARAMETER
CONDITION
MIN TYP MAX
VDD=5.0V
THD+N = 10 %
THD+N = 1 %
1.78
1.44
PO RMS Output Power
VDD=3.6V
THD+N = 10 %
THD+N = 1 %
0.91
0.74
VDD=2.5V
THD+N = 10 %
THD+N = 1 %
0.43
0.35
Total Harmonic Distortion
THD+N
plus Noise
VDD=5.0V, Po=1.0W
VDD=3.6V, Po=0.5W
VDD=2.5V, Po=0.2W
0.035
0.039
0.058
SNR Signal to Noise Ratio
VDD=5.0V, Po=1.0W
98
Power Supply Rejection
PSRR
Ratio
VDD=3.6V, Vripple=200mVpp
Inputs ac grounded with Ci=2µF
f=217 Hz
74
CMRR Common-Mode Rejection VDD=3.6V, VIC=1Vpp, f=217Hz
76
Output integrated noise
Vn (A-weighted)
η Efficiency (TDFN-8L)
VDD=3.6V
fin=20Hz ~ 20kHz
VDD=5V, THD+N=10%
23
90
UNIT
W
W
W
W
W
W
%
%
%
dB
dB
dB
µV
%
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014
Revision: 0.03
5/18
5 Page 
ESMT
Preliminary
Common Mode Rejection Ratio vs Frequency
AD51652
Efficiency vs Output Power
100
90
80
70
60
50
40
30
20
10
0
0 0.5 1
Efficiency
1.5 2
Output Power (W)
2.5
RL=8ohm
RL=4ohm
3 3.5
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014
Revision: 0.03
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet AD51652.PDF ] | |
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