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PDF N0600N Data sheet ( Hoja de datos )
| Número de pieza | N0600N | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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N0600N
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0220EJ0100
Rev.1.00
Jan 25, 2011
Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)
⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low input capacitance
⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.
N0600N-S17-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50p/tube
Package
Isolated TO-220
typ. 2.2 g
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±30
±60
20
2.0
150
−55 to +150
9.2
12.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
6.25
62.5
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V
°C/W
°C/W
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
N0600N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
50
40
30
20
10
0
-75
VGS = 4.5 V
ID = 15 A
VGS = 10 V
ID = 15 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(on)
tf
VDD = 30 V
VGS = 10 V
Rg = 0 Ω
td(off)
tr
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
VGS = 4.5 V
1
VGS = 0 V
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
VGS = 0 V
f = 1 MHz
10
0.01
0.1
Coss
Crss
1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
VDS
VGS
40 VDS = 32 V
20 V
30 8 V
10
8
6
20 4
10
0
0
100
2
ID = 30 A
0
10 20 30
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
IF - Diode Forward Current - A
100
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet N0600N.PDF ] | |
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