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PDF N02M0818L1A Data sheet ( Hoja de datos )

Número de pieza N02M0818L1A
Descripción 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
Fabricantes NanoAmp Solutions 
Logotipo NanoAmp Solutions Logotipo



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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L1Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device comprises a
2 Mbit Static Random Access Memory organized
as 262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N02M0818L1A is optimal for various
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
-40oC to +85oC and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
1.4 to 2.3 Volts - STSOP package
• Dual Power Supply - Die Only
1.4 to 2.3 Volts - VCC
1.4 to 3.6 Volts - VCCQ
• Very low standby current
200nA maximum at 2.0V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Automatic power down to standby mode
• Special Processing to reduce Soft Error Rate
(SER)
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N02M0818L1AN 32 - STSOP I
N02M0818L1AD Known Good Die -40oC to +85oC
1.4V - 2.3V
85ns @ 1.7V
150ns @ 1.4V
Standby
Current
(ISB), Max
20 µA
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
N02M0818L1A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VS S
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCCQ
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Output Power (die only)
Power
Ground
Stock No. 23208-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02M0818L1A pdf
NanoAmp Solutions, Inc.
N02M0818L1Awww.DataSheet4U.com
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
Timing VCCQ > or = VCC
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
VCC = 1.4 - 2.3 V
Min.
Max.
150
150
150
50
20
20
0 30
0 30
20
150
75
75
50
0
0
30
50
0
10
VCC = 1.7 - 2.3 V
Min.
Max.
85
85
85
40
10
5
0 15
0 15
10
85
50
50
40
0
0
15
40
0
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23208-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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