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N02L163WN1A Función - 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit - NanoAmp Solutions

Número de pieza N02L163WN1A
Descripción 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
Fabricantes NanoAmp Solutions 
Logotipo NanoAmp Solutions Logotipo
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N02L163WN1A Hoja de datos, Descripción, Manual
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WN1Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
Features
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N02L163WN1AB
N02L163WN1AT
N02L163WN1AB1
N02L163WN1AT2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Pb-Free
-40oC to +85oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
44 - TSOP II Green
(DOC# 14-02-014 REV L ECN# 01-1000)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02L163WN1A2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bitNanoAmp Solutions
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