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1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit - N01L163WN1A - NanoAmp Solutions

Número de pieza N01L163WN1A
Descripción 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
Fabricantes NanoAmp Solutions 
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N01L163WN1A datasheet
N01L163WN1A pdf, arduino
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N01L163WN1Aw w w . D a t a S h
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
tWC
tCW
tAW
tLBW, tUBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
2.3 - 3.6 V
Min.
Max.
70
70
70
35
35
10
5
10
0 20
0 20
0 20
10
70
50
50
50
40
0
0
20
40
0
5
2.7 - 3.6 V
Min.
Max.
55
55
55
30
30
10
5
10
0 20
0 20
0 20
10
55
40
40
40
40
0
0
20
35
0
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(DOC# 14-02-011 REV G ECN# 01-1272)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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