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PDF K07N120 Datasheet ( Hoja de datos )

Fast IGBT in NPT-technology - Infineon Technologies

Número de pieza K07N120
Descripción Fast IGBT in NPT-technology
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo
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K07N120 datasheet

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K07N120 pdf
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25A
SKW07N120
25A
20A
VGE=17V
15A 15V
13V
11V
9V
10A 7V
20A
VGE=17V
15V
15A 13V
11V
9V
10A 7V
5A 5A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
25A
20A
15A
TJ=+150°C
TJ=+25°C
10A TJ=-40°C
5A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
IC=16A
5V
4V IC=8A
3V IC=4A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2_1 Apr 06

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K07N120 arduino
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20A
15A
TJ=150°C
10A
TJ=25°C
5A
0A
0V 1V 2V 3V 4V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
SKW07N120
3.0V
2.5V
IF=14A
2.0V
1.5V
IF=7A
IF=3.5A
1.0V
0.5V
0.0V
0°C
40°C
80°C
120°C
Tj, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
R,(K/W)
0.75885
0.88470
0.85670
τ, (s)
0.09354
0.00543
0.00042
R1 R2
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
Power Semiconductors
10
Rev. 2_1 Apr 06

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