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D04S60 Hoja de datos en formato PDF ( Datasheet )

D04S60 Función - SDD04S60 - Infineon Technologies

Número de pieza D04S60
Descripción SDD04S60
Fabricantes Infineon Technologies 
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D04S60 Hoja de datos, Descripción, Manual
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Final data
SDP04S60, SDD04S60
SDT04S60
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W 1)
No forward recovery
P-TO220-2-2.
Product Summary
VRRM
600
Qc 13
IF 4
V
nC
A
P-TO252-3-1.
P-TO220-3-1.
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
PIN 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
PIN 3
A
C
Unit
A
A²s
V
W
°C
Page 1
2004-02-11





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Número de piezaDescripciónFabricantes
D04S60SDD04S60Infineon Technologies
Infineon Technologies

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