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J110 Función - N-Channel Silicon Junction Field-Effect Transistor - InterFET Corporation

Número de pieza J110
Descripción N-Channel Silicon Junction Field-Effect Transistor
Fabricantes InterFET Corporation 
Logotipo InterFET Corporation Logotipo
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J110 Hoja de datos, Descripción, Manual
B-50
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
01/99
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Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
J110 J110A
Min Max Min Max Unit
– 25 – 25
–3 –3
– 0.5 – 4 – 0.5 – 4
10 10
33
V
nA
V
mA
nA
rds(on)
Cgd
Cgs
Cgd + Cgs
td(on)
tr
td(off)
tf
18
15
15
85
Typ
4
1
6
30
25
15
15
85
Typ
4
1
6
30
pF
pF
pF
ns
ns
ns
ns
Process NJ450
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 5V, ID = 1 µA
VDS = 15V, VGS = ØV
VDS = 5V, VGS = – 10V
VGS = Ø, VDS < = 0.1V
VDS = ØV, VGS = – 10V
VDS = ØV, VGS = – 10V
VDS = VGS = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD
VGS(OFF)
RL
J110 J110A
1.5 1.5
–5 –5
150 150
V
V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ110, SMPJ110A
www.interfet.com





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