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9012H Función - PNP EPITAXIAL SILICON TRANSISTOR - Unisonic Technologies

Número de pieza 9012H
Descripción PNP EPITAXIAL SILICON TRANSISTOR
Fabricantes Unisonic Technologies 
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9012H Hoja de datos, Descripción, Manual
UTC 9012
PNP EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-40
Collector-emitter voltage
VCEO
-20
Emitter-base voltage
VEBO
-5
Collector current
Ic -500
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=-100µA,IE=0
-40
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-20
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-25V,IE=0
Emitter cutoff current
IEBO
VEB=-3V,IC=0
DC current gain
hFE1
VCE=-1V,Ic=-50mA
64
hFE2
VCE=-1V,Ic=-500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)
Ic=-500mA,IB=-50mA
Base-emitter on voltage
VBE(on)
VCE=-1V,Ic=-10mA
-0.6
TYP
120
90
-0.18
-0.95
-0.67
MAX
-100
-100
300
-0.6
-1.2
-0.7
UNIT
V
V
V
nA
nA
V
V
V
CLASSIFICATION OF hFE1
RANK
D
E
RANGE
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-029,A





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9012H Datasheet ( Hojas de datos )


Hoja de datos destacado

Número de piezaDescripciónFabricantes
9012(9012 - 9017) NAND GATES/HEX INVERTERSETC
ETC
9012PNP SILICON EPITAXIAL TRANSISTORUnisonic Technologies
Unisonic Technologies
9012HPNP EPITAXIAL SILICON TRANSISTORUnisonic Technologies
Unisonic Technologies



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