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PDF 4015B Data sheet ( Hoja de datos )

Número de pieza 4015B
Descripción CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output
Fabricantes Intersil Corporation 
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CD4015BMS
December 1992
CMOS Dual 4-Stage Static Shift Register
With Serial Input/Parallel Output
Features
Pinout
• High-Voltage Type (20V Rating)
• Medium Speed Operation 12MHz (typ.) Clock Rate at
VDD - VSS = 10V
• Fully Static Operation
• 8 Master-Slave Flip-Flops Plus Input and Output Buffering
• 100% Tested For Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Standardized Symmetrical Output Characteristics
• Maximum Input Current of 1µA at 18V Over Full Pack-
age-Temperature Range; 100nA at 18V and 25oC
• Noise Margin (Full Package-Temperature Range) =
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Applications
• Serial-Input/Parallel-Output Data Queueing
• Serial to Parallel Data Conversion
• General-Purpose Register
Description
CD4015BMS consists of two identical, independent, 4-stage
serial-input/parallel output registers. Each register has inde-
pendent CLOCK and RESET inputs as well as a single serial
DATA input. “Q” outputs are available from each of the four
stages on both registers. All register stages are D type, mas-
ter-slave flip-flops. The logic level present at the DATA input
is transferred into the first register stage and shifted over one
stage at each positive-going clock transition. Resetting of all
stages is accomplished by a high level on the reset line.
Register expansion to 8 stages using one CD4015BMS
package, or to more than 8 stages using additional
CD4015BMS’s is possible.
The CD4015BMS is supplied in these 16 lead outline pack-
ages:
CD4015BMS
TOP VIEW
CLOCK B 1
Q4B 2
Q3A 3
Q2A 4
Q1A 5
RESET A 6
DATA A 7
VSS 8
16 VDD
15 DATA B
14 RESET B
13 Q1B
12 Q2B
11 Q3B
10 Q4A
9 CLOCK A
Functional Diagram
DATA A
CLOCK A
RESET A
7
9
6
DATA B
CLOCK B
RESET B
15
1
14
VDD
16
4
STAGE
4
STAGE
5
Q1A
4
Q2A
3 Q3A
10 Q4A
13
Q1B
12
Q2B
11
Q3B
2
Q4B
8
VSS
Braze Seal DIP H4X
Frit Seal DIP
H1F
Ceramic Flatpack H6W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-89
File Number 3295

1 page




4015B pdf
Specifications CD4015BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
IDD
IOL5
IOH5A
± 1.0µA
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1
Note 1
2 - 5, 10 - 13
1, 6 - 9, 14, 15
16
Static Burn-In 2
Note 1
2 - 5, 10 - 13
8 1, 6, 7, 9, 14 - 16
Dynamic Burn-
In Note 1
-
6, 8, 14
16
2 - 5, 10 - 13
1, 9
7, 15
Irradiation
Note 2
2 - 5, 10 - 13
8 1, 6, 7, 9, 14 - 16
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
7-93

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