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Memory Micromodules General Information for D1/ D2 and C Packaging - D10 - STMicroelectronics

Número de pieza D10
Descripción Memory Micromodules General Information for D1/ D2 and C Packaging
Fabricantes STMicroelectronics 
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D10 datasheet
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MICROMODULES
RELIABILITY
Product qualification and on-going reliability
monitoring is performed by ST. The principal steps
are listed in Table 8 and Table 9.
Table 8. Package Related Tests
Test
Description
Method
Condit ion
LPTD
Criteria
(note 1)
1 Geometry
ST Specification Monitoring/Lot
5 0/45
2 Visual inspection
ST Specification Outgoing/Lot
AQL= 0.040 0/315
3
Temperature cycling
MIL-STD-883
Method 1010
-40 °C to 150 °C, 100 cycles
5
0/45
4
Salt atmosphere
corrosion of contacts
MIL-STD-883
Method 1009
35 °C, 5% NaCl, 24 hour
15 0/15
5
Moisture resistance
MIL-STD-883
Method 1004
85 °C, 85% HR Biased 5.5 V,
168 hour
7
0/32
6
Vibration with electrical
measurement
ISO/IEC 10373
1 octave/minute, acceleration up to
10 G (repeated 20 times)
20
measurement memory check at 25 °C
0/11
7 Bending properties
Long side: deflection 2 cm
ISO/IEC 7816-1 Short side: deflection 1 cm
30 bendings per minute
20
0/11
8 Torsion properties
Maximum displacement 15° ±1°
ISO/IEC 7816-1 1000 torsions, 30 torsions per minute
applied on long side only
20
0/11
Note: 1. The notation m/n means: reject the whole lot if more than m devices fail from a sample of n devices. For instance, 0/45 means a
sample of 45 devices taken from a lot, with the whole lot only accepted if every one of the 45 sample devices passed the test.
Table 9. Product Related Tests
Test
Description
Method
Condit ion
LPTD
1 Life test
MIL-STD-883
Method 1005
140 °C, 6 V, 504 hours measurement 3
memory check at 25 °C
2 Electrostatic discharge MIL-STD-883
Method 3015
Human body model:
1.5 k, 100 pF, ± 5000 V
n/a
Electrostatic discharge MIL-STD-883
Method 3015
Machine model: 0 , 200 pF, ± 200 V n/a
measurement memory check at 25 °C
3 Data retention,
Temperature storage
MIL-STD-883
Method 1005
150 °C, 1000 hours, no bias
5
measurement memory check at 25 °C
4 Write/Erase cycles
ST Specification 100,000 Cycles
200 ppm/
1024 byte/
1000 cycle
5 Magnetic field, memory ISO IEC 10373 79,500 A/m
check
15
6 X-rays, memory check ISO IEC 10373 70 kV, 0.1 Grey
15
7 UV light, memory check ISO IEC 10373 15 W.s/cm2, 30 minutes maximum
15
Criteria
0/76
0/9
0/9
0/45
0/32
1/25
1/25
1/25
5/13





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