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PDF MCR65-9 Data sheet ( Hoja de datos )
| Número de pieza | MCR65-9 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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MCR65 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse voltage(1)
(TJ = 25 to +125°C, gate open)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Non-repetitive peak reverse blocking voltage
(t ≤ 5ms) (1)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
35
75
150
VRSM
300
400
Volts
500
600
700
800
900
Forward current RMS
IT(RMS)
55 Amps
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
Circuit fusing considerations
(t = 8.3ms)
ITSM 550 Amps
I2t
1255
A2s
Peak gate power
PGM 20 Watts
Average gate power (Pulse width ≤ 2µs)
PG(AV)
0.5 Watts
Peak forward gate current
IGM 2 Amps
Forward peak gate voltage
Reverse peak gate voltage
VGFM
VGRM
10 Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied
to the gate concurrently with a negative potential on the anode.
Rev. 20130128
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MCR65-9.PDF ] | |
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