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PDF WPM2048 Data sheet ( Hoja de datos )

Número de pieza WPM2048
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
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No Preview Available ! WPM2048 Hoja de datos, Descripción, Manual

WPM2048
Single P-Channel, -20V, -2.2A, Power MOSFET
VDS (V)
-20
Rds(on) (mΩ)
96@ VGS=-4.5V
135@ VGS=-2.5V
Descriptions
The WPM2048 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2048 is Pb-free and
Halogen-free.
WPM2048
www.sh-willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
3
W48*
12
W48= Device Code
* = Month (A~Z)
Marking
Order information
Device
WPM2048-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2014 - Rev.1.0

1 page




WPM2048 pdf
500
F=1MHZ
400
300
Ciss
200
100
0
0
Coss
Crss
2468
-VDS-Drain to Source Voltage(V)
10
Capacitance
4 VDD=-10V ID=-2.7A
WPM2048
5
4
T=125oC
3
2
T=25oC
1
0
0.0 0.3 0.6 0.9 1.2
-VSD-Source to Drain Voltage(V)
Body diode forward voltage
10
Limit by Rdson*
100us
3
2
1
0
024
Qg(nC)
Gate Charge Characteristics
1 1ms
10ms
0.1
TA=25C
Single Pulse
DC
100ms
1s
10s
6
0.01
0.1
Bvdss Limit
1 10
-V - Drain Source Voltage (V)
DS
100
Safe operating power
1
Duty Cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Square Wave Pulse Duration (s)
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 132°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Sep, 2014 - Rev.1.0

5 Page










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