|
|
PDF TK150E09NE Data sheet ( Hoja de datos )
| Número de pieza | TK150E09NE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TK150E09NE (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
TK150E09NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H)
TK150E09NE
E-Bike
Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)
Low leakage current
: IDSS = 10 μA (max) (VDS = 85 V)
Enhancement mode
: Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)
10.2±0.3
Φ3.7±0.1
A
Unit: mm
1.27±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Gate−source voltage
Drain current
DC (Tc = 25°C)
(Note 1)
DC (Tc = 100°C)
(Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 2)
Peak diode recovery dv/dt (Note 5)
Channel temperature
Storage temperature range
Thermal Characteristics
Symbol
VDSS
VGSS
ID
ID
IDP
PD
EAS
IAS
dv/dt
Tch
Tstg
Rating
85
±20
150
120
450
230
161
72
12
175
−55~175
Unit
V
A
W
mJ
A
V/ns
°C
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.65
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 64 V, Tch = 25°C (initial), L =24 H, RG = 25 , IAS = 72A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: IDR≦180A,di/dt≦160A/μs, Tch≦Tch max.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1.46±0.32
0.81±0.1
Φ0.2 M A
2.54 2.54
123
1. Gate
2. Drain
3. Source
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
Weight: 1.9 g (typ.)
2
1
3
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).Thermal Characteristics
1 2016-03-09
1 page  
rth tw
TK150E09NE
Safe operating area
EAS – Tch
5 2016-03-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK150E09NE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TK150E09NE | MOSFET ( Transistor ) | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |