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PDF WNM2024 Data sheet ( Hoja de datos )

Número de pieza WNM2024
Descripción N-Channel MOSFET
Fabricantes Will Semiconductor 
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No Preview Available ! WNM2024 Hoja de datos, Descripción, Manual

WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
VDS (V)
20
Rds(on) ()
0.027@ VGS=4.5V
0.031@ VGS=2.5V
0.036@ VGS=1.8V
Descriptions
The WNM2024 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2024 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
WNM2024
Http//:www.willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
3
W24*
12
W24= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WNM2024-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.1

1 page




WNM2024 pdf
WNM2024
2000
1600
VGS=0V
F=1MHz
1.5
1.2
1200
800 Ciss
Coss
400 Crss
0
2468
VDS Drain-to-Source Voltage (V)
Capacitance
12
10
10
8
TA = 25_C
6
4
2
0
0.01
0.1
1 10
Time (sec)
100 600
Single pulse power
2
1
Duty Cycle = 0.5
0.9
T=150oC
0.6
T=25oC
0.3
0.2 0.3 0.4 0.5 0.6
VSD-Source-to-Drain Voltage(V)
Body diode forward voltage
100
Limited by RDS(on)
10
100 μs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
BVDSS Limited
100 ms
1 s, 10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Safe operating area
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
168_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Dec,2011 - Rev.1.1

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