|
|
PDF BSO615CG Data sheet ( Hoja de datos )
| Número de pieza | BSO615CG | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSO615CG (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
Rev. 2.1
BSO 615 C G
SIPMOS® Small-Signal-Transistor
Features
Product Summary
· Dual N- and P -Channel
Drain source voltage
· Enhancement mode
Drain-Source on-state
· Logic Level
resistance
· Avalanche rated
Continuous drain current
· Pb-free lead plating; RoHS compliant
VDS
RDS(on)
ID
N
60
0.11
3.1
P
-60 V
0.3 W
-2 A
Type
Package
Marking
BSO 615 C PG-DSO-8
615C
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
WID = 3.1 A , VDD = 25 V, RGS = 25
WID = -2 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 3.1 A, VDS = 48 V, di/dt = 200 A/µs
IS = -2 A, VDS = -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3.1 -2
2.5 -1.6
12.4 -8
47 -
- 70
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2012-04-04
1 page  
Power Dissipation (N-Ch.)
Ptot = f (TA)
Rev. 2.1
BSO 615 C G
Power Dissipation (P-Ch.)
Ptot = f (TA)
BSO 615 C
2.2
W
BSO 615 C
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (N-Ch.)
ID = f (TA)
parameter: VGS³ 10 V
BSO 615 C
3.4
A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (P-Ch.)
ID = f (TA)
parameter: VGS³ -10 V
BSO 615 C
-2.2
A
2.8 -1.8
2.4 -1.6
-1.4
2.0
-1.2
1.6 -1.0
1.2 -0.8
-0.6
0.8
-0.4
0.4
-0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
0.0
0
20 40 60 80 100 120 °C
160
TA
Page 5
2012-04-04
5 Page 
Rev. 2.1
Avalanche Energy EAS = f (Tj) (N-Ch.)
parameter: ID = 3.1 A , VDD = 25 V
RGS = 25 W
50
mJ
40
35
30
25
20
15
10
5
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (N-Ch.)
VGS = f (QGate)
parameter: ID = 3.1 A
BSO 615 C
16
V
BSO 615 C G
Avalanche Energy EAS = f (Tj)
parameter: ID = -2 A , VDD = -25 V
RGS = 25 W
80
mJ
60
50
40
30
20
10
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = -2 A
BSO 615 C
-16
V
12 -12
10 -10
8
6 0,2 VDS max
4
0,8 VDS max
-8
-6 0,2 VDS max
-4
0,8 VDS max
2 -2
0
0 2 4 6 8 10 12 14 16 nC 20
QGate
0
0
2
4
6
8 10 12 14 16 nC 20
QGate
Page 11
2012-04-04
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSO615CG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSO615C | SIPMOS Small-Signal-Transistor |  Infineon Technologies AG |
| BSO615CG | Small-Signal-Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |