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PDF MC14106B Data sheet ( Hoja de datos )

Número de pieza MC14106B
Descripción Hex Schmitt Trigger
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Hex Schmitt Trigger
The MC14106B hex Schmitt Trigger is constructed with MOS P–channel
and N–channel enhancement mode devices in a single monolithic structure.
These devices find primary use where low power dissipation and/or high
noise immunity is desired. The MC14106B may be used in place of the
MC14069UB hex inverter for enhanced noise immunity or to “square up”
slowly changing waveforms.
Increased Hysteresis Voltage Over the MC14584B
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
Pin–for–Pin Replacement for CD40106B and MM74C14
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCan Be Used to Replace the MC14584B or MC14069UB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS* (Voltages Referenced to VSS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVDD DC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin, Vout Input or Output Voltage (DC or Transient)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin, Iout Input or Output Current (DC or Transient),
per Pin
– 0.5 to + 18.0
– 0.5 to VDD + 0.5
± 10
V
V
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD Power Dissipation, per Package†
500 mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTL Lead Temperature (8–Second Soldering)
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
EQUIVALENT CIRCUIT SCHEMATIC
(1/6 OF CIRCUIT SHOWN)
This device contains protection circuitry to guard against damage
due to high static voltages or electric fields. However, precautions must
be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, Vin and
Vout should be constrained to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage
level (e.g., either VSS or VDD). Unused outputs must be left open.
MC14106B
L SUFFIX
CERAMIC
CASE 632
P SUFFIX
PLASTIC
CASE 646
D SUFFIX
SOIC
CASE 751A
ORDERING INFORMATION
MC14XXXBCP
MC14XXXBCL
MC14XXXBD
Plastic
Ceramic
SOIC
TA = – 55° to 125°C for all packages.
LOGIC DIAGRAM
12
34
56
98
11 10
13 12
VDD = PIN 14
VSS = PIN 7
REV 3
1/94
©MMOotoTrOolaR, IOncL. A199C5MOS LOGIC DATA
MC14106B
255

1 page




MC14106B pdf
OUTLINE DIMENSIONS
L SUFFIX
CERAMIC DIP PACKAGE
CASE 632–08
ISSUE Y
–A–
14 9
–B–
17
CL
–T–
SEATING
PLANE
F
GN
D 14 PL
0.25 (0.010) M T A S
K
M
J 14 PL
0.25 (0.010) M T B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.750 0.785 19.05 19.94
B 0.245 0.280 6.23 7.11
C 0.155 0.200 3.94 5.08
D 0.015 0.020 0.39 0.50
F 0.055 0.065 1.40 1.65
G 0.100 BSC
2.54 BSC
J 0.008 0.015 0.21 0.38
K 0.125 0.170 3.18 4.31
L 0.300 BSC
7.62 BSC
M 0_ 15_ 0_ 15_
N 0.020 0.040 0.51 1.01
14
1
A
F
HG
8
B
7
P SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
C
N
SEATING
PLANE
D
K
L
J
M
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 19.56
B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78
G 0.100 BSC
2.54 BSC
H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38
K 0.115 0.135 2.92 3.43
L 0.300 BSC
7.62 BSC
M 0_ 10_ 0_ 10_
N 0.015 0.039 0.39 1.01
MOTOROLA CMOS LOGIC DATA
MC14106B
259

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