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1 Mb Ultra-Low Power Serial SRAM - ON Semiconductor

Número de pieza N01S830BA
Descripción 1 Mb Ultra-Low Power Serial SRAM
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo
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N01S830BA datasheet

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N01S830BA pdf
N01S830HA, N01S830BA
CS
SCK
012345
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Instruction
24−bit address
Data out
SIO[1:0] C3 C2 C1 C0 A11 A10 A3 A2 A1 A0 X X X X H0 H0 L0 L0 H1 H1 L1 L1
MSB
MSB
Notes:
C[3:0] = 03h
H0 = 2 high order bits of data byte 0
L0 = 2 low order bits of data byte 0
H1 = 2 high order bits of data byte 1
L1 = 2 low order bits of data byte 1
Figure 4. DUAL Read Sequence
CS
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Instruction
24−bit address
Data out
SIO[3:0] C1 C0 A5 A4 A3 A2 A1 A0 X X H0 L0 H1 L1 H2 L2 H3 L3
MSB
MSB
Notes:
C[1:0] = 03h
H0 = 4 high order bits of data byte 0
L0 = 4 low order bits of data byte 0
H1 = 4 high order bits of data byte 1
L1 = 4 low order bits of data byte 1
Figure 5. QUAD Read Sequence
Write Operation
The serial SRAM WRITE is selected by enabling CS low.
First, the 8-bit WRITE instruction is transmitted to the
device followed by the 24-bit address with the 7 MSBs being
don’t care. After the WRITE instruction and addresses are
sent, the data to be stored in memory is shifted in on the SI
pin.
If operating in page mode, after the initial word of data is
shifted in, additional data words can be written as long as the
address requested is sequential on the same page. Simply
write the data on SI pin and continue to provide clock pulses.
The internal address pointer is automatically incremented to
the next higher address on the page after each word of data
is written in. This can be continued for the entire page length
of 32 words long. At the end of the page, the addresses
pointer will be wrapped to the 0 word address within the
page and the operation can be continuously looped over the
32 words of the same page. The new data will replace data
already stored in the memory locations.
If operating in burst mode, after the initial word of data is
shifted in, additional data words can be written to the next
sequential memory locations by continuing to provide clock
pulses. The internal address pointer is automatically
incremented to the next higher address after each word of
data is read out. This can be continued for the entire array
and when the highest address is reached, 1FFFFh, the
address counter wraps to the address 00000h. This allows
the burst write cycle to be continued indefinitely. Again, the
new data will replace data already stored in the memory
locations.
All WRITE operations are terminated by pulling CS high.
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N01S830BA arduino
N01S830HA, N01S830BA
Table 8. CAPACITANCE (Note 2)
Item
Symbol
Test Conditions
Input Capacitance
CIN VIN = 0 V, f = 1 MHz, TA = 25°C
I/O Capacitance
CI/O VIN = 0 V, f = 1 MHz, TA = 25°C
2. These parameters are verified in device characterization and are not 100% tested.
Min Max
7
7
Table 9. TIMING TEST CONDITIONS
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
Value
0.1 VCC to 0.9 VCC
5 ns
0.5 VCC
CL = 30 pF
Industrial (I): −40°C to +85°C
Automotive (E): −40°C to +125°C
Units
pF
pF
Table 10. TIMING
Characteristic
Clock Frequency
Clock Rise Time
Clock Fall Time
Clock High Time
Clock Low Time
Clock Delay Time
CS Setup Time
CS Hold Time
CS Disable Time
SCK to CS
Data Setup Time
Data Hold Time
Output Valid From Clock Low
Output Hold Time
Output Disable Time
HOLD Setup Time
HOLD Hold Time
HOLD Low to Output High−Z
HOLD High to Output Valid
Symbol
fCLK
tR
tF
tHI
tLO
tCLD
tCSS
tCSH
tCSD
tSCS
tSU
tHD
tV
tHO
tRDIS
tHS
tHH
tHZ
tHV
I−Temp
Min Max
20
20
20
25
25
25
25
50
25
5
10
10
25
0
20
10
10
10
50
E−Temp
Min Max
16
20
20
32
32
32
32
50
32
5
10
10
32
0
20
10
10
10
50
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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