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PDF Si5997DU Data sheet ( Hoja de datos )
| Número de pieza | Si5997DU | |
| Descripción | Dual P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual P-Channel 30 V (D-S) MOSFET
Si5997DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.054 at VGS = - 10 V
- 30
0.088 at VGS = - 4.5 V
ID (A)
- 6a
- 6a
Qg (Typ.)
4.8 nC
PowerPAK ChipFET Dual
1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
S1 2
D1 G1
8 D1
7
D2
6 D2
5
3
S2 4
G2
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
S1
Marking Code
DF XXX
Lot Traceability
and Date Code
G1
G2
S2
Bottom View
Part #
Code
Ordering Information: Si5997DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 6a
- 6a
- 5.1b, c
- 4.1b, c
- 25
- 6a
- 1.9b, c
10.4
6.7
2.3b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
43
9.5
55
°C/W
12
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12 12
10 10
8
Package Limited
6
8
6
44
22
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si5997DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si5997DU.PDF ] | |
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