|
|
PDF Si4554DY Data sheet ( Hoja de datos )
| Número de pieza | Si4554DY | |
| Descripción | N- and P-Channel 40 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si4554DY (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
Si4554DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 10 V
N-Channel 40
0.026 at VGS = 8 V
0.027 at VGS = 4.5 V
0.027 at VGS = - 10 V
P-Channel - 40 0.028 at VGS = - 8 V
0.034 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
8e
8e 6.5
8
- 8e
- 8e 21.7
- 7.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
G1
S2
G2
Top View
Ordering Information:
Si4554DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
40
± 20
8e
6.8
6.8b, c
5.4b, c
40
2.6
1.6b, c
40
10
5
3.1
2
2b, c
- 40
± 20
- 8e
- 6.8
- 6.6b, c
- 5.3b, c
- 40
- 2.6
- 1.6b, c
- 40
- 20
20
3.2
2.1
2b, c
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
1.28b, c
1.28b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
50 62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30 40
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
P-Channel
Typ. Max.
47 62.5
29 38
Unit
°C/W
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
Si4554DY
Vishay Siliconix
ID = 6.8 A
TJ = 150 °C
10
1 TJ = 25 °C
0.04
0.03
0.02
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
1.9
0.01
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
60
1.6
ID = 250 μA
1.3
1
48
36
24
12
0.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
10 ms
100 ms
0.1 1 s
TA = 25 °C
Single Pulse
10 s
DC
BVDSS Limited
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si4554DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
Single Pulse
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63660.
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet Si4554DY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si4554DY | N- and P-Channel 40 V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |