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PDF Si4447ADY Data sheet ( Hoja de datos )
| Número de pieza | Si4447ADY | |
| Descripción | P-Channel 40 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 40 V (D-S) MOSFET
Si4447ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) ()
0.045 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)d
- 7.2
- 6.1
Qg (Typ.)
11.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches, Adaptor Switch
- Notebook PCs
S
G
Top View
Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
- 40
± 20
- 7.2
- 5.7
- 5.5a, b
- 4.4a, b
- 20
- 3.5
- 2.1a, b
- 10
5
4.2
2.7
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Symbol
RthJA
RthJF
Typical
40
24
Maximum
50
30
Unit
°C/W
www.vishay.com
1
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New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8.0
Si4447ADY
Vishay Siliconix
6.4
4.8
3.2
1.6
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
5 2.0
4 1.6
3 1.2
2 0.8
1 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
www.vishay.com
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si4447ADY.PDF ] | |
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