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PDF Si4101DY Data sheet ( Hoja de datos )
| Número de pieza | Si4101DY | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 30 V (D-S) MOSFET
Si4101DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 30 0.0060 at VGS = - 10 V
0.0080 at VGS = - 4.5 V
SO-8
ID (A)d
- 25.7
- 22.3
Qg (Typ.)
65 nC
S1
S2
S3
G4
8D
7D
6D
5D
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor Switch, Load Switch
• Power Management
• Notebook Computers and
Portable Battery Packs
G
S
Top View
Ordering Information:
Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 25.7
- 20.6
- 18a, b
- 14.4a, b
- 70
-5
- 2.4a, b
- 30
45
6
3.8
2.9a, b
1.9a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 84 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
36
16
Maximum
43
21
Unit
°C/W
Document Number: 62828
For technical questions, contact: [email protected]
www.vishay.com
S13-0110-Rev. A, 21-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
24
18
12
6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
82
Si4101DY
Vishay Siliconix
6 1.5
41
2 0.5
0
0 25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62828
For technical questions, contact: [email protected]
www.vishay.com
S13-0110-Rev. A, 21-Jan-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si4101DY.PDF ] | |
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