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PDF K08T120 Datasheet ( Hoja de datos )

Número de pieza K08T120
Descripción IGBT
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K08T120 datasheet

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K08T120 pdf
TrenchStop® Series
IKW08T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C,
VCC=600V, IC=8A,
VGE=0/15V,
RG= 81,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
200
2.3
20
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
5
Rev. 2.4 12.06.2013

5 Page

K08T120 arduino
TrenchStop® Series
IKW08T120
VCE
600V
30A 30A
600V
400V
200V
20A 20A
IC
10A 10A
400V
200V
IC
0V
0us
0.5us
1us
1.5us
0A
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=81Ω, Tj = 150C,
Dynamic test circuit in Figure E)
VCE
0A
0us
0.5us
1us
1.5us
0V
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=81Ω, Tj = 150C,
Dynamic test circuit in Figure E)
100K/W D=0.5
0.2
0.1
0.05
10-1K/W
R,(K/W)
0.187
0.575
0.589
0.350
R1
, (s)
1.73*10-1
2.75*10-2
2.57*10-3
2.71*10-4
R2
0.02
0.01
single pulse
C1=1/R1 C2=2/R2
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
0.02
R,(K/W)
0.552
0.732
0.671
0.344
R1
0.01
single pulse
C1=1/R1
, (s)
7.23*10-2
8.13*10-3
1.09*10-3
1.55*10-4
R2
C2=2/R2
10-2K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
10-2K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
IFAG IPC TD VLS
11
Rev. 2.4 12.06.2013

11 Page





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