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IGBT - Infineon

Número de pieza K08T120
Descripción IGBT
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K08T120 datasheet

1 Page

K08T120 pdf
TrenchStop® Series
IKW08T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C,
VCC=600V, IC=8A,
VGE=0/15V,
RG= 81,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
200
2.3
20
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
5
Rev. 2.4 12.06.2013

5 Page

K08T120 arduino
TrenchStop® Series
IKW08T120
15V
240V
960V
10V
5V
0V
0nC
25nC
50nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=8 A)
1nF
Ciss
100pF
Coss
Crss
10pF 0V
10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
15µs
10µs
5µs
75A
50A
25A
0µs
12V 14V 16V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
0A
12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 600V, Tj 150C)
IFAG IPC TD VLS
10
Rev. 2.4 12.06.2013

10 Page





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