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PDF MBR20150C Data sheet ( Hoja de datos )

Número de pieza MBR20150C
Descripción HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Fabricantes BCD 
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Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR20150C is available in standard, TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Features
High Surge Capacity
• 150°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard-Ring foe Stress Protection
• Pb- Free Packages are available
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2*10A
150V
150°C
0.75V
Mechanical Characteristics
Case: Epoxy, Molded
• Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately):
1.9 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
Jun. 2009 Rev. 1. 0
TO-220-3
TO-220-3 (2)
Figure 1. Package Type of MBR20150C
BCD Semiconductor Manufacturing Limited
1

1 page




MBR20150C pdf
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
Typical Performance Characteristics
100
10
TJ=150°C
1
T =125°C
J
0.1
TJ=25°C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
20
15
10
5
0
90 100 110 120 130 140 150 160
Case Temperature (°C)
Figure6. Average Forward Current vs.
Case Temperature (Square, Per Diode)
10000
1000
TJ=150°C
100 TJ=125°C
10
1
0.1
0.01
0
TJ=25°C
20 40 60 80 100 120 140 160
Reverse Voltage (V)
Figure 5. Typical Reverse Current Per Diode
.
Jun. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
5

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